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XP135A1145SR 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



Torex Semiconductor 로고
Torex Semiconductor
XP135A1145SR 데이터시트, 핀배열, 회로
XP135A1145SR
Power MOSFET
ETR1116_001
GENERAL DESCRIPTION
The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching
characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
APPLICATIONS
Notebook PCs
Cellular and portable phones
On-board power supplies
FEATURES
Low On-State Resistance (Nch) : Rds (on) = 0.033Ω@ Vgs = 10V
: Rds (on) = 0.045Ω@ Vgs = 4.5V
Low On-State Resistance (Pch) : Rds (on) = 0.065Ω@ Vgs = -10V
: Rds (on) = 0.110Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage
: 4.5V (Nch) : -4.5V (Pch)
N-Channel/P-channel Power MOSFET
DMOS Structure
Two FET Devices Built-in
Package
: SOP-8
PIN CONFIGURATION
EQUIVALENT CIRCUIT
PIN ASSIGNMENT
PIN NUMBER
1
2
3
4
5~6
7~8
PIN NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source (Nch)
Gate (Nch)
Source (Pch)
Gate (Pch)
Drain (Pch)
Drain (Nch)
ABSOLUTE MAXIMUM RATINGS
Ta = 25
PARAMETER
RATINGS
SYMBOL
Nch Pch
UNITS
Drain-Source Voltage Vdss 30 -30
V
Gate-Source Voltage Vgss ±20 ±20
V
Drain Current (DC)
Id 6 -4 A
Drain Current (Pulse)
Idp
20 -16
A
Reverse Drain Current
Idr
6 -4
A
Channel Power Dissipation * Pd 2 W
Channel Temperature
Tch
150
Storage Temperature Range Tstg
-55~150
* When implemented on a glass epoxy PCB
1/8


XP135A1145SR 데이터시트, 핀배열, 회로
XP135A1145SR
ELECTRICAL CHARACTERISTICS
DC Characteristics (N-channel Power MOSFET)
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
Vds= 30V, Vgs= 0V
Vgs=±20V, Vds= 0V
Id= 1mA, Vds= 10V
Id= 3A, Vgs= 10V
Id= 3A, Vgs= 4.5V
Forward Transfer Admittance *1
| Yfs |
Id= 3A, Vds= 10V
Body Drain Diode
Forward Voltage
*1 Effective during pulse test.
Vf
If= 6A, Vgs= 0V
MIN.
-
-
1.0
-
-
-
TYP.
-
-
-
0.026
0.035
12
Ta = 25
MAX. UNITS
10
±1
2.5
0.033
0.045
μA
μA
V
Ω
Ω
-S
-
0.85
1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= 10V, Vgs=0V
f= 1MHz
MIN.
-
-
-
TYP.
620
350
120
Ta = 25
MAX. UNITS
- pF
- pF
- pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= 5V, Id= 3A
Vdd= 10V
MIN.
-
-
-
-
TYP.
15
20
30
10
Ta = 25
MAX. UNITS
- ns
- ns
- ns
- ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP.
62.5
MAX. UNITS
- /W
2/8




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XP135A1145SR mosfet

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Power MOSFET ( Transistor ) - Torex Semiconductor