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XP131A1617SR 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



Torex Semiconductor 로고
Torex Semiconductor
XP131A1617SR 데이터시트, 핀배열, 회로
XP131A1617SR
Power MOSFET
ETR1105_001
GENERAL DESCRIPTION
The XP131A1617SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
The small SOP-8 package makes high density mounting possible.
APPLICATIONS
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
FEATURES
Low On-State Resistance: Rds(on)=0.014Ω(Vgs=4.5V)
: Rds(on)=0.019Ω(Vgs=2.5V)
Ultra High-Speed Switching
Driving Voltage
: 2.5V
N-Channel Power MOSFET
DMOS Structure
Package
: SOP-8
PIN CONFIGURATION
PIN ASSIGNMENT
PIN NUMBER
1~3
4
5~8
PIN NAME
S
G
D
FUNCTION
Source
Gate
Drain
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Ta = 25
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss ±12
V
Drain Current (DC)
Id 10 A
Drain Current (Pulse)
Idp 40 A
Reverse Drain Current Idr 10 A
Channel Power Dissipation * Pd
2.5 W
Channel Temperature
Tch 150
Storage Temperature Range Tstg -55~150
* When implemented on a glass epoxy PCB
1/5


XP131A1617SR 데이터시트, 핀배열, 회로
XP131A1617SR
ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *
Forward Transfer Admittance *
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vds=20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=1mA, Vds=10V
Id=5A, Vgs=4.5V
Id=5A, Vgs=2.5V
Id=5A, Vds=10V
Body Drain Diode
Forward Voltage
Vf
If=10A, Vgs=0V
* Effective during pulse test.
MIN.
-
-
0.7
-
-
-
-
TYP.
-
-
-
0.010
0.013
32
0.8
Ta = 25
MAX. UNITS
10
±1
1.4
0.014
0.019
-
μA
μA
V
Ω
Ω
S
1.1 V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
MIN.
-
-
-
TYP.
1650
1000
450
Ta = 25
MAX. UNITS
- pF
- pF
- pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=5V, Id=5A
Vdd=10V
MIN.
-
-
-
-
TYP.
15
25
65
15
Ta = 25
MAX. UNITS
- ns
- ns
- ns
- ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Aambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP.
50
MAX. UNITS
- /W
2/5




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XP131A1617SR mosfet

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XP131A1617SR

Power MOSFET ( Transistor ) - Torex Semiconductor