파트넘버.co.kr CJ2301B 데이터시트 PDF


CJ2301B 반도체 회로 부품 판매점

P-Channel MOSFET



JCET 로고
JCET
CJ2301B 데이터시트, 핀배열, 회로
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301B P-Channel 20-V(D-S) MOSFET
V(BR)DSS
-20 V
RDS(on)MAX
  120mΩ@-4.5V 
160mΩ@-2.5V  
ID
-2.3A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z TrenchFET Power MOSFET
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t 5s)
Junction Temperature
Storage Temperature
VDS
VGS
ID
IDM
IS
PD
R θJA
TJ
Tstg
Value
-20
±8
-2.3
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
/W
www.cj-elec.com
1
C,May,2015


CJ2301B 데이터시트, 핀배열, 회로
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol Test Condition
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a
Dynamicb
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-20V, VGS =0V
VGS =-4.5V, ID =-2.6A
VGS =-2.5V, ID =-2.0A
VDS =-5V, ID =-2.8A
Ciss
Coss
Crss
Qg
VDS =-10V,VGS =0V,f =1MHz
VDS =-10V,VGS =-4.5V,ID =-3A
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Qgs
Qgd
Rg
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Drain-source body diode characteristics
VDS =-10V,VGS =-2.5V,ID =-3A
f =1MHz
VDD=-10V,
RL=10, ID =-1A,
VGEN=-4.5V,Rg=1
Continuous source-drain diode current IS TC=25
Pulse diode forward current a
ISM
Body diode voltage
VSD IS=-0.7A
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Units
-20
-0.4 -1
±100
-1
0.078 0.120
0.102 0.160
6.5
V
nA
µA
S
405
75
55
5.5 10
3.3 6
0.7
1.3
6.0
11 20
35 60
30 50
10 20
pF
nC
ns
-1.3
-10
-0.8 -1.2
A
V
www.cj-elec.com
2
C,May,2015




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: JCET

( jcet )

CJ2301B mosfet

데이터시트 다운로드
:

[ CJ2301B.PDF ]

[ CJ2301B 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


CJ2301

MOSFETS - JCST



CJ2301-HF

MOSFET ( Transistor ) - Comchip



CJ2301B

P-Channel MOSFET - JCET



CJ2301S

P-Channel MOSFET - JCET