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Huajing Microelectronics |
Silicon N-Channel Power MOSFET
CS100N03 B8
○R
General Description:
CS100N03 B8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
30
100
100
4.0
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching
circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the
RoHS standard.
Features:
l Trench FET Power MOSFET
l Low ON Resistance(Rdson≤5.3mΩ)
l Low Gate Charge (Typical Data:68nC)
l Low Reverse transfer capacitances(Typical:300pF)
l 100% Single Pulse avalanche energy Test
Applications:
UPS,DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
I
D
a1
M
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
30
100
75
400
±20
200
31
2.5
5
100
0.67
TJ,Tstg
TL
Operating Junction and Storage Temperature
Range
Maximum Temperature for Soldering
175,–55 to 175
300
V
A
W
mΩ
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
CS100N03 B8
○R
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Δ BVDSS/ Δ
TJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown
Vo l t a g e
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25℃
VDS = 30V, VGS= 0V,
Ta = 25℃
VDS =24V, VGS= 0V,
Ta = 125℃
VGS =+20V
VGS =-20V
Rating
Min.
Typ.
Max
.
30 -- --
Units
V
-- 0.08 -- V/℃
-- -- 1
µA
-- -- 10
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp≤300µs,δ≤2%
Test Conditions
V G S = 1 0 V, ID = 5 0 A
V G S = 5 V, ID = 4 0 A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
-- 4.0 5.3
4.5 8.0
1.0 3.0
Units
mΩ
mΩ
V
Dynamic Characteristics
Symbol
Parameter
gfs
Ciss
Coss
Crss
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Test Conditions
VDS=15V, ID =100A
VGS = 0V VDS =25V
f = 1.0MHz
Test Conditions
ID =30A VDD = 15V
VGS = 10V RG = 12Ω
ID =30A VDD =15V
VGS = 10V
Rating
Min. Typ. Max.
-- 100 --
-- 3500 --
-- 350 --
-- 300 --
Units
S
pF
Rating
Min. Typ. Max.
-- 12 --
-- 65 --
-- 125 --
-- 100 --
-- 68 --
-- 8 --
-- 18 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 15V0 1
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