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Infineon |
Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7313Q
S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS
RDS(on)
typ.
max.
ID
30V
23m
29m
6.9A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7313Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7313Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7313QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
30
6.9
5.8
58
2.4
0.02
± 20
450
3.6
-55 to + 175
Units
V
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJL Junction-to-Drain Lead
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
2015-9-30
AUIRF7313Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
––– 23
––– 32
29
46
m
VGS
VGS
=
=
10V, ID = 6.9A
4.5V, ID = 5.5A
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
7.5 ––– ––– S VDS = 15V, ID = 3.5A
––– ––– 1.0
––– ––– 25
µA
VDS = 24V, VGS = 0V
VDS = 24V,VGS = 0V,TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– 22 33
ID = 3.5A
––– 2.6 3.9 nC VDS = 15V
––– 6.8 10
VGS = 10V
––– 3.7 –––
VDD = 15V
–––
–––
7.3
21
–––
–––
ns
ID = 3.5A
RG = 6.8
––– 11 –––
VGS = 10V
––– 755 –––
VGS = 0V
––– 310 ––– pF VDS = 25V
––– 120 –––
ƒ = 1.0MHz
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
27
43
Max. Units
Conditions
3.0
58
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.0 V TJ = 25°C,IS = 3.5A,VGS = 0V
40 ns TJ = 25°C ,IF = 3.5A,
65 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, Starting TJ = 25°C, L = 76mH, RG = 50, IAS = 3.5A VGS =10V. Part not recommended for use above this value.
ISD 3.5A, di/dt 590A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
When mounted on 1 inch square copper board.
R is measured at TJ of approximately 90°C.
2 2015-9-30
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