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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
5N60
·DESCRIPTION
·Drain Current ID= 5.6A@ TC=25℃
·Drain Source Voltage
: VDSS= 600V(Min)
·Fast Switching Speed
·APPLICATIONS
·AC Adapter, Battery Charge and SMPS
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=25℃ 5.6 A
ID(puls)
Pulse Drain Current
20 A
Ptot Total Dissipation@TC=25℃
100 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
5N60
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD Diode Forward On-Voltage
IS=5.6A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID=2.5A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
MIN TYPE MAX UNIT
600 V
2.0 4.0 V
1.5 V
1.5 Ω
±100 nA
10 µA
SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
VDD=300V,ID=5A
RG=25Ω
Tf Fall Time
MIN TYP MAX UNIT
15.8 ns
15.2 ns
46 ns
18.2 ns
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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