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Inchange Semiconductor |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP150N
Features
·Drain Current –ID= 42A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.036Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
100 V
±20
V
42 A
140 A
160 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
0.95
40
UNIT
℃/W
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP150N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VGS= 10V; ID= 23A
VGS= ±20V;VDS= 0
VDS= 100V; VGS= 0,Tc= 25℃
VDS= 80V; VGS= 0,Tc= 150℃
VSD Forward On-Voltage
IS= 23A; VGS= 0
MIN MAX UNIT
100 V
24V
0.036
Ω
±100
nA
25 μA
250 μA
1.3 V
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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