FQP33N10 반도체 회로 부품 판매점
N-Channel Mosfet Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQP33N10
·FEATURES
·Low RDS(on)
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for low voltage applications such as
Audio amplifier,high efficiency switching DC/DC converters,
and DC motor control.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100 V
VGS Gate-Source Voltage-Continuous
±25
V
ID Drain Current-Continuous
33 A
IDM Drain Current-Single Plused
132 A
PD Total Dissipation @TC=25℃
127 W
Tj Max. Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.18 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQP33N10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 16.5A
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
VSD Forward On-Voltage
IS= 33A; VGS=0
Gfs Forward Transconductance
VDS= 40V；ID= 16.5A
MIN MAX UNIT
100 V
24V
0.052
Ω
±100
nA
1.0 uA
1.5 V
22 S
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
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FQP33N10 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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