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PDF MTB04N03J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB04N03J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB04N03J3 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTB04N03J3 BVDSS
ID
30V
75A
RDS(ON)@VGS=10V, ID=30A 3.1mΩ(typ)
RDS(ON)@VGS=4.5V, ID=24A 4.7mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB04N03J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB04N03J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 5/11
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
2
1.8 ID=250μA
1.6
1000
1.4
C oss
1.2
Crss
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
1
0.8
-60
-20 20
60 100
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=40A
140
6
4
2
0
0 20 40 60 80 100 120
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
1000
100
RDS(ON) Limit
10
1
10μs
100μs
1ms
10ms
100ms
DC
0.1
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs Case Temperature
90
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB04N03J3
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
TO-252 Dimension
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 11/11
Marking:
4
Device
Name
Date
Code
B04
N03
□□□□
123
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
Inches
Min. Max.
Millimeters
Min. Max.
DIM
Inches
Min. Max.
Millimeters
Min. Max.
A 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386
A1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772
B 0.039 0.048 0.990 1.210 H
0.163 REF
4.140 REF
b 0.026 0.034 0.660 0.860 K
0.190 REF
4.830 REF
b1 0.026 0.034 0.660 0.860 L 0.386 0.409 9.800 10.400
C 0.018 0.023 0.460 0.580 L1
0.114 REF
2.900 REF
C1 0.018 0.023 0.460 0.580 L2 0.055 0.067 1.400 1.700
D 0.256 0.264 6.500 6.700 L3 0.024 0.039 0.600 1.000
D1 0.201 0.215 5.100 5.460 P
0.026 REF
0.650 REF
E 0.236 0.244 6.000 6.200 V
0.211 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB04N03J3
CYStek Product Specification
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MTB04N03J3.PDF ] | |
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