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PDF MTB040P04Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTB040P04Q8 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB040P04Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C967Q8
Issued Date : 2016.09.21
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTB040P04Q8 BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDSON@VGS=-10V, ID=-6A
RDSON@VGS=-4.5V,ID=-5A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
-40V
-6.8A
-5.4A
31mΩ(typ)
41mΩ(typ)
Equivalent Circuit
MTB040P04Q8
Outline
DD
SOP-8
DD
G：Gate
S：Source
D：Drain
Pin 1
G
SSS
Ordering Information
Device
MTB040P04Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs/ Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB040P04Q8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C967Q8
Issued Date : 2016.09.21
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
100 C oss
Crss
10
0 5 10 15 20 25 30 35 40
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
1
1.2
1
ID=-1mA
0.8
0.6
ID=-250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-20V
8
6
0.1
0.01
0.001
VDS=-10V
Pulsed
TA=25°C
0.01 0.1 1 10
-ID, Drain Current(A)
100
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
1
0.1 TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.01
0.01
0.1 1 10
-ID, Drain-Source Voltage(V)
100
4
VDS=-32V
2
ID=-6A
0
0 4 8 12 16 20 24
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
8
7
6
5
4
3
2 TA=25°C, Tj=150°C, VGS=-10V
1 RθJA=40°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB040P04Q8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB040P04Q8.PDF ] | |
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