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MTB030P06KH8 반도체 회로 부품 판매점

P-Channel Enhancement Mode Power MOSFET



CYStech Electronics 로고
CYStech Electronics
MTB030P06KH8 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
Page No. : 1/10
P-Channel Enhancement Mode Power MOSFET
MTB030P06KH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=-10V, ID=-6A
RDS(ON)@VGS=-4.5V, ID=-4A
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD protected gate
RoHS compliant package
RDS(ON)@VGS=-4V, ID=-3A
-60V
-34A
-5.9A
21.4 mΩ(typ)
35.6 mΩ(typ)
42.6 mΩ(typ)
Symbol
MTB030P06KH8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTB030P06KH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB030P06KH8
CYStek Product Specification


MTB030P06KH8 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=-10V
Continuous Drain Current @TC=100°C, VGS=-10V
Continuous Drain Current @TA=25°C, VGS=-10V
Continuous Drain Current @TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy @ L=0.5mH, ID=-24 Amps,
VDD=-15V
Repetitive Avalanche Energy
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
(Note 5)
(Note 5)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
-60
±20
-34*
-24*
-5.9
-4.7
-110*
-24
144
7.5
75
37.5
2
1.3
-55~+175
Unit
V
A
mJ
W
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2
62
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C, and the maximum
temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of
VDD=-15V, ID=-12A, L=0.5mH, VGS=-10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB030P06KH8
CYStek Product Specification




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MTB030P06KH8 mosfet

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P-Channel Enhancement Mode Power MOSFET - CYStech Electronics