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PDF MTB030N04N3 Data sheet ( Hoja de datos )
| Número de pieza | MTB030N04N3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB030N04N3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 1/ 9
40V N-Channel Enhancement Mode MOSFET
MTB030N04N3
BVDSS
ID @VGS=10V
VGS=10V, ID=7.9A
RDSON(TYP) VGS=4.5V, ID=7.3A
40V
8A
25.3mΩ
34.2mΩ
Features
• Low on-resistance
• Low voltage gate drive
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB030N04N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTB030N04N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB030N04N3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Coss
100
Crss
Ciss
1.2 ID=1mA
1
0.8
ID=250μ A
0.6
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
Pulsed
Ta=25°C
VDS=5V
1
Gate Charge Characteristics
10
VDS=20V
8 ID=3.9A
6
4
0.1
2
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
10
100μ s
1 1ms
10ms
0.1
TA=25°C, Tj=150°C,VGS=10V
RθJA=100°C/W, Single Pulse
100ms
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
10
9
8
7
6
5
4
3
2
1 VGS=10V, RθJC=50°C/W
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTB030N04N3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB030N04N3.PDF ] | |
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