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JCST |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3404 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The CJ3404 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suitable for use as a load
switch or in PWM applications.The source leads are separated to allow a
Kelvin connection to the source,which may be used to bypass the source
inductance.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
MARKING: R4
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current (t ≤10s)
ID
Pulsed drain current *
IDM
Power dissipation
PD
Thermal resistance from junction to ambient
RθJA
Junction temperature
TJ
Storage temperature
Tstg
* Repetitive rating : Pulse width limited by maximum junction temperature.
Value
30
±20
5.8
30
0.35
357
150
-55~ 150
Unit
V
V
A
A
W
℃/W
℃
℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =30V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage
Drain-source on-resistance (note 1)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =5.8A
VGS =4.5V, ID =4.8A
Forward tranconductance (note 1)
gFS VDS =5V, ID =5.8A
Diode forward voltage
DYNAMIC PARAMETERS (note 2)
Input capacitance
Output capacitance
VSD IS=1A
Ciss
Coss VDS =15V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg VDS =0V,VGS =0V,f =1MHz
SWITCHING PARAMETERS(note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
VGS=10V,VDS=15V,
RL=2.6Ω,RGEN=3Ω
Note :
1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2. These parameters have no way to verify.
Min Typ Max Units
30 V
1 µA
±100 nA
1 3V
28 mΩ
42 mΩ
5S
1V
820
118
85
1.5
pF
pF
pF
Ω
6.5
3.1
15.1
2.7
ns
ns
ns
ns
A,Dec,2010
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