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JCST |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3402 N-Channel MOSFET
DESCRIPTION
The CJ3402 uses advanced trench technology to provide excellent
RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a load switch or in PWM application.
FEATURES
z Lead free product is acquired
z Surface mount package
SOT-23
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z Load Switch and in PWM applications
MARKING: R2
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
30
±12
4
15
0.35
357
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
A,Mar,2012
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =24V,VGS = 0V
Gate-body leakage current
IGSS VGS =±12V, VDS = 0V
Gate threshold voltage (note 3)
Drain-source on-resistance (note 3)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =4A
VGS =4.5V, ID =3A
VGS =2.5V, ID =2A
Forward transconductance (note 3)
gFS VDS =15V, ID =4A
Diode forward voltage (note 3)
VSD IS=1A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Ciss
Coss
Crss
Rg
VDS =15V,VGS =0V,f =1MHz
VDS =0V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
VGS=10V,VDS=15V,
RL=3.75Ω,RGEN=6Ω
Total gate charge
Gate-source Charge
Gate-drain Charge
Body diode reverse recovery time
Body diode reverse recovery charge
Qg
Qgs VDS =15V,VGS =4.5V,ID =4A
Qgd
t.
Qrr
IF=4A,dI/dt=100A/µs
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤80µs, Duty Cycle≤0.5%.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
30 V
1 µA
100 nA
0.6 1 1.4 V
45 55 mΩ
55 70 mΩ
83 110 mΩ
8S
0.8 1
V
390 pF
54.5 pF
41 Pf
3Ω
3.3 ns
1 ns
21.7 ns
2.1 ns
4.34 nC
0.6 nC
1.38 nC
1.2 ns
6.3 nC
A,Mar,2012
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