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JCST |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400 N-Channel Enhancement Mode Field Effect Transistor
FEATURE
z High dense cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
MARKING: R0
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
30
±12
5.8
30
350
357
150
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
V(BR) DSS
IDSS
IGSS
VGS = 0V, ID =250µA
VDS =24V,VGS = 0V
VGS =±12V, VDS = 0V
On characteristics
Drain-source on-resistance
(note 3)
RDS(on)
Forward tranconductance
gFS
Gate threshold voltage
VGS(th)
Dynamic Characteristics (note 4,5)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
Switching Characteristics (note 4,5)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
VGS =10V, ID =5.8A
VGS =4.5V, ID =5A
VGS =2.5V,ID=4A
VDS =5V, ID =5A
VDS =VGS, ID =250µA
VDS =15V,VGS =0V,f =1MHz
VDS =0V,VGS =0V,f =1MHz
VGS=10V,VDS=15V,
RL=2.7Ω,RGEN=3Ω
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3)
VSD IS=1A,VGS=0V
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Min Typ Max Units
30 V
1 µA
±100 nA
35 mΩ
40 mΩ
52 mΩ
8S
0.7 1.4 V
1050 pF
99 pF
77 pF
3.6 Ω
5 ns
7 ns
40 ns
6 ns
1V
A,Dec,2010
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