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JCST |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ3134KW N-Channel Power MOSFET
GENERRAL DESCRIPTION
This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
SOT-323
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
APPLICATION
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
MARKING: 34K
Maximum ratings (Ta=25℃ unless otherwise noted)
1. GATE
2. SOURCE
3. DRAIN
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID
IDM
PD
RθJA
Tj
Tstg
Value
20
±12
0.75
3
200
625
150
-55 ~+150
Unit
V
A
mW
℃/W
℃
A ,Nov,2013
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
On/Off States
Drain-Source Breakdown Voltage
Gate-Threshold Voltage(note 3)
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance(note 3)
Forward Transconductance
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gFS
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =0V, VGS =±12V
VDS =20V, VGS =0V
VGS =4.5V, ID =650mA
VGS =2.5V, ID =550mA
VGS =1.8V, ID =450mA
VDS =10V, ID =800mA
Dynamic Characteristics(note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS =16V,VGS =0V,f =1MHz
Switching Times (note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD=10V,ID=500mA,
VGS=4.5V,RG=10Ω
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage (note 3)
VSD IS=0.15A, VGS = 0V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
Min Typ Max Unit
20
V
0.35 1
±50 µA
1 µA
380
450 mΩ
800
1S
120
20 pF
15
6.7
4.8
ns
17.3
7.4
1.2 V
A,Nov,2013
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