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JCST |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2102 N-Channel 20-V(D-S) MOSFET
FEATURE
z TrenchFET Power MOSFET
APPLICATIONS
z Load Switch for Portable Devices
z DC/DC Converter
MARKING: TS2
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction
Storage Temperature
Symbol
VDS
VGS
ID
IS
PD
RθJA
TJ
TSTG
SOT-323
1. GATE
2. SOURCE
3. DRAIN
Value
20
±8
2.1
0.6
0.2
625
150
-55 ~+150
Unit
V
A
W
℃/W
℃
A,Jul,2012
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistance1
Forward transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =10µA
VDS =VGS, ID =50µA
VDS =0V, VGS =±8V
VDS =20V, VGS =0V
VGS =4.5V, ID =3.6A
VGS =2.5V, ID =3.1A
VDS =5V, ID =3.6A
Diode forward voltage
VSD IS=0.94A,VGS=0V
Dynamic Characteristics
Total gate charge
Gate-source charge
Gate-drain charge
Input capacitance 2
Output capacitance 2
Reverse transfer capacitance2
Switching Characteristics2
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS =10V,VGS =4.5V,ID =3.6A
VDS =10V,VGS =0V,f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=10V,
RL=5.5Ω, ID ≈3.6A,
VGEN=4.5V,Rg=6Ω
Notes :
1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
2. These parameters have no way to verify.
Min Typ Max Unit
20
0.65 0.95 1.2
±100
1
0.045 0.060
0.070 0.115
8
0.76 1.2
V
nA
µA
Ω
S
V
4.0 10
0.65 nC
1.5
300
120 pF
80
7 15
55 80
ns
16 60
10 25
A,Jul,2012
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