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PDF CJ3400 Data sheet ( Hoja de datos )
| Número de pieza | CJ3400 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | ZPSEMI | |
| Logotipo |  |
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CJ3400
Feature
30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V.
RDS(ON) =40mΩ(MAX) @VGS = 4.5V.
RDS(ON) =55mΩ(MAX) @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON) .
Reliable and Rugged.
SC-59 for Surface Mount Package.
N-Channel Enhancement Mode MOSFET
SC-59
Applications
● Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25℃ Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
TA=25℃ Unless Otherwise noted
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
Symbol
BVDSS
Test Conditions
VGS=0V, ID=250μA
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
IGSSF
IGSSR
VGS=12V, VDS=0V
VGS=-12V, VDS=0V
On Characteristics
Gate Threshold Voltage
Static Drain-source
On-Resistance
VGS(th)
RDS(ON)
VGS= VDS, ID=250µA
VGS =10V, ID =5.8A
VGS =4.5V, ID =5A
VGS =2.5V, ID =4A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=1.25A
Limit
30
±12
5.8
Units
V
V
A
Min Typ. Max Units
30 - - V
- - 1 μA
- - 100 nA
- - -100 nA
0.6 - 1.5 V
- 30 35 mΩ
- 33 40 mΩ
- 45 55 mΩ
1.2 V
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| PDF Descargar | [ Datasheet CJ3400.PDF ] | |
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