CJ3134K 반도체 회로 부품 판매점
N-Channel MOSFET
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 ZPSEMI |
CJ3134K
SOT-723 Plastic-Encapsulate MOSFETS
CJ3134K N-Channel MOSFET
SOT-723
FEATURES
z Lead Free Product is Acquired
z Surface Mount Package
z N-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
APPLICATION
z Load/Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
1. GATE
2. SOURCE
3. DRAIN
MARKING: KF
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10μs)
Power Dissipation (note 1)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8” from case for 10 s)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
TL
Value
Unit
20 V
±V
0.75 A
1.8 A
150 mW
833
150
-55~+150
260
℃/W
℃
℃
℃
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CJ3134K
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =20V,VGS = 0V
Gate-body leakage current
IGSS VGS =±12V, VDS = 0V
Gate threshold voltage (note 2)
Drain-source on-resistance (note 2)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =4.5V, ID =0.65A
VGS =2.5V, ID =0.55A
VGS =1.8V, ID =0.45A
Forward transconductance (note 2)
gFS VDS =10V, ID =0.8A
Diode forward voltage
VSD IS=0.15A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =16V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time (note 3)
td(on)
Turn-on rise time (note 3)
Turn-off delay time (note3)
Turn-off fall time (note 3)
tr
td(off)
tf
VGS=4.5V,VDS=10V,
ID =500mA,RGEN=10Ω
Notes :
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
20 V
1 µA
50µA
0.35 1 V
380 mΩ
450 mΩ
800 mΩ
1.6 S
1.2 V
79 120 pF
13 20 pF
9 15 pF
6.7 ns
4.8 ns
17.3 ns
7.4 ns
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CJ3134K mosfet
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