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Número de pieza | PN10HN60 | |
Descripción | N-Channel Superjunction MOSFET | |
Fabricantes | Chipown | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PN10HN60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PN10HN60
N-Channel Superjunction MOSFET
600V, 10A, 0.38Ω
Chipown
NeoFET®
General Description
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep
trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific
on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ
MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provides superior
switching performance and ruggedness. The NeoFET fits the PC ATX Power, Server, Telecom, Adapter, LCD and
PDP TV, Lighting, UPS and industrial power applications.
Features
■ RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
■ Extremely high dv/dt capablity
■ Very high commutation ruggedness
■ Extremely low losses due to very low Rdson*Qg
■ Ultra low gate charge ( Typ. Qg = 25nC)
■ Low effective output capacitance
■ 100% avalanche tested
■ JEDEC qualified, Pb-free plating
Applications
■ PC ATX Power
■ Adapter
■ LCD and PDP TV
■ Lighting
■ Server, Telecom,
■ UPS
■ Switching applications
Pin Assignments
TO-220
TO-220FP
Order codes
PN10HN60-CAI-T1
PN10HN60-CBI-T1
Package
TO220
TO220FP
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
1/8
1 page PN10HN60
Figure7. Breakdown Voltage Variation vs. Temperature
1.2
Figure8. On-Resistance Variation vs. Temperature
1.1
1.0
0.9
0.8
-100
*Notes:
1.VGS=0V
2.ID=1mA
-50 0 50 100 150
TJ,Junction Temperature[0C]
200
Figure9. Maximum Drain Current vs. Case
Temperature
Figure 10. Maximum Safe Operating Area
50
10
1
Opreation in This Area
is Limited by RDS(on)
10µs
100µs
1ms
10ms
DC
0.1
0.01
1
*Note:
1.Tc=250C
2.TJ=1500C
3.Single Pulse
10 100 1000
VDS,Drain-Source Voltage[V]
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510)8521-7718 http://www.chipown.com.cn
Rev.A.1110
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PN10HN60.PDF ] |
Número de pieza | Descripción | Fabricantes |
PN10HN60 | N-Channel Superjunction MOSFET | Chipown |
PN10HN60-CAI-T1 | N-Channel Superjunction MOSFET | Chipown |
PN10HN60-CBI-T1 | N-Channel Superjunction MOSFET | Chipown |
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