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AP02N60H-HF 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Advanced Power Electronics 로고
Advanced Power Electronics
AP02N60H-HF 데이터시트, 핀배열, 회로
Advanced Power
Electronics Corp.
AP02N60H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Lower Gate Charge
Simple Drive Requirement
RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
600V
8Ω
1.6A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP02N60J) is available for low-profile
applications.
G D S TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
1.6
1
6
39
0.31
64
1.6
0.5
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.2
62.5
110
Data & specifications subject to change without notice
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Units
/W
/W
/W
1
200807222


AP02N60H-HF 데이터시트, 핀배열, 회로
AP02N60H/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC)
VDS=10V, ID=1A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
VGS=+30V
ID=1.6A
VDS=480V
VGS=10V
VDD=300V
ID=1.6A
RG=10Ω,VGS=10V
RD=150Ω
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
600 - - V
- 0.6 - V/
- - 8
2 - 4V
- 0.2 -
S
- - 10 uA
- - 100 uA
- - +100 nA
- 14 20 nC
- 2 - nC
- 8.5 - nC
- 9.5 - ns
- 12 - ns
- 21 - ns
- 9 - ns
- 155 240 pF
- 27 - pF
- 14 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=1.6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 360 - ns
- 1970 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=50mH , RG=25Ω , IAS=1.6A.
3.Pulse test
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2




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AP02N60H-HF mosfet

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