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PDF MTB080P06L3 Data sheet ( Hoja de datos )
| Número de pieza | MTB080P06L3 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB080P06L3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C069L3
Issued Date : 2016.03.14
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06L3 BVDSS
ID @ TA=25°C, VGS=-10V
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-4.5V, ID=-2A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
-60V
-3.3A
90mΩ (typ)
117mΩ (typ)
Equivalent Circuit
MTB080P06L3
G：Gate D：Drain
S：Source
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTB080P06L3-0-T3-G
Package
SOT-223
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06L3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C069L3
Issued Date : 2016.03.14
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
10
0
Crss
5 10 15 20 25
-VDS, Drain-Source Voltage(V)
30
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4
1.2
1 ID=-1mA
0.8
0.6 ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
100
VDS=-10V
Pulsed
TA=25°C
0.01 0.1
1
-ID, Drain Current(A)
Maximum Safe Operating Area
10
10
10μs
1 100μs
1ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=50°C/W, Single Pulse
10ms
100ms
DC
0.01
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
8
VDS=-30V
6 VDS=-12V
4 VDS=-48V
2
ID=-4A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 TA=25°C, VGS=-10V, RθJA=50°C/W
0.0
25
50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB080P06L3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB080P06L3.PDF ] | |
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