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PDF MTB050P10H8 Data sheet ( Hoja de datos )
| Número de pieza | MTB050P10H8 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
Page No. : 1/11
P-Channel Enhancement Mode Power MOSFET
MTB050P10H8 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
RDSON(TYP)
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-12A
-100V
-20A
-4.4A
39.5mΩ
45.3mΩ
Symbol
MTB050P10H8
G：Gate D：Drain S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB050P10H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB050P10H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
Page No. : 5/11
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
100
Crss
10
0
5 10 15 20 25
-VDS, Drain-Source Voltage(V)
30
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
0.6
0.4 ID=-250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
RDSON
10 Limited
100μs
1 1m
10ms
0.1
TA=25°C, VGS=-10V,Tj=150°C
RθJA=65°C/W, Single Pulse
0.01
100ms
1s
DC
0.01 0.1
1
10 100 1000
-VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Junction Temperature
5
4
Gate Charge Characteristics
10
8
6
4
2 VDS=-80V
ID=-15A
0
0 5 10 15 20 25 30 35 40 45
Qg, Total Gate Charge(nC)
Forward Transfer Admittance vs Drain Current
100
VDS=-10V
10
3
2
1 TA=25°C, VGS=-10V,
RθJA=65°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
1 VDS=-15V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
MTB050P10H8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
DFN5×6 Dimension
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
Page No. : 11/11
Marking :
Device
Name
Date Code
B050
P10
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM Min.
Max.
Inches
Min. Max.
DIM
Millimeters
Min. Max.
Inches
Min. Max.
A 0.900 1.000 0.035 0.039 k 1.190 1.390 0.047 0.055
A3 0.254 REF
0.010 REF
b 0.350 0.450 0.014 0.018
D 4.944 5.096 0.195 0.201 e
1.270 TYP.
0.050 TYP.
E 5.974 6.126 0.235 0.241 L 0.559 0.711 0.022 0.028
D1 3.910 4.110 0.154 0.162 L1 0.424 0.576 0.017 0.023
E1 3.375 3.575 0.133 0.141 H 0.574 0.726 0.023 0.029
D2 4.824 4.976 0.190 0.196
θ
10°
12°
10°
12°
E2 5.674 5.826 0.223 0.229
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB050P10H8
CYStek Product Specification
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MTB050P10H8.PDF ] | |
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