|
|
Número de pieza | MTB020N03KN3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB020N03KN3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C143N3
Issued Date : 2016.01.21
Revised Date : 2016.02.22
Page No. : 1/9
30V N-Channel Enhancement Mode MOSFET
MTB020N03KN3 BVDSS
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=5A
RDSON@VGS=4.5V, ID=4A
30V
5.9A
17.1mΩ(typ)
21.1mΩ(typ)
Features
• Simple drive requirement
• Small package outline
• ESD protected gate
• Pb-free lead plating and halogen-free package
Symbol
MTB020N03KN3
Outline
SOT-23
D
G:Gate
S:Source
D:Drain
S
G
Ordering Information
Device
Package
Shipping
MTB020N03KN3-0-T1-G
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB020N03KN3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C143N3
Issued Date : 2016.01.21
Revised Date : 2016.02.22
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
100 C oss
0.8
Crss 0.6
ID=250μA
10
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1
VDS=15V
Gate Charge Characteristics
10
VDS=24V
8
VDS=15V
6
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
4
2 ID=5A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDSON
10 Limited
100μs
1
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=90°C/W
Single Pulse
0.01
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
1s
DC
100
Maximum Drain Current vs Junction Temperature
7
6
5
4
3
2
1 TA=25°C, VGS=10V, RθJA=90°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB020N03KN3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB020N03KN3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB020N03KN3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
MTB020N03KN6 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |