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PDF 2N6660 Data sheet ( Hoja de datos )
| Número de pieza | 2N6660 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6660 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
• VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω
• Fast Switching
• Low Threshold Voltage (Logic Level)
• Low CISS
• Integral Source-Drain Body Diode
• Hermetic Metal TO39 Package
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage
60V
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM Pulsed Drain Current (1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
725mW
De-rate TA > 25°C
5.8mW/°C
TJ Operating Temperature Range
-65 to +150°C
Tstg Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
RθJA
Thermal Resistance, Junction To Ambient
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
Min.
Typ.
Max. Units
25 °C/W
172 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8263
Website: http://www.semelab-tt.com
Issue 2
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6660.PDF ] | |
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