파트넘버.co.kr 4612 데이터시트 PDF


4612 반도체 회로 부품 판매점

MOSFET ( Transistor )



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Tuofeng Semiconductor
4612 데이터시트, 핀배열, 회로
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
Features
n-channel
VDS (V) = 60V
ID = 4.5A (VGS=10V)
RDS(ON)
< 55m(VGS=10V)
< 60m(VGS=4.5V)
p-channel
-60V
-3.2A (VGS = -10V)
RDS(ON)
< 80m (VGS = -10V)
< 95m (VGS = -4.5V)
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
Current A
TA=25°C
ID
4.5
Pulsed Drain Current B
IDM 20
Max p-channel
-60
±20
-3.2
-20
Units
V
V
A
Power Dissipation
TA=25°C
PD
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
t 10s
Steady-State
Steady-State
2
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
2
-55 to 150
W
°C
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 60 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W


4612 데이터시트, 핀배열, 회로
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min Typ Max Units
60 V
IDSS Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
1 µA
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100 nA
1 2.1 3
V
20 A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
VGS=4.5V, ID=3A
Forward Transconductance
VDS=5V, ID=4.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
46 55 m
50 60 m
11 S
0.74 1
V
3A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=4.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=6.7,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
450 540
60
25
1.65 2
pF
pF
pF
8.5 10.5
4.3 5.5
1.6
2.2
4.7 7
2.3 4.5
15.7 24
1.9 4
27.5 35
32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005




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