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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250A
FEATURES
·Drain Current –ID= 32A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.085Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±20
V
V
ID Drain Current-Continuous
32 A
IDM Drain Current-Single Pluse
128 A
PD Total Dissipation @TC=25℃
204 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.7 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 16A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
VSD Forward On-Voltage
IS= 32A; VGS= 0
·
MIN MAX UNIT
200 V
24V
0.085
Ω
±100
nA
250 μA
2.0 V
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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