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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF120
DESCRIPTION
·Drain Current ID=8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.3Ω(Max)
·Nanosecond Switching Speeds
APPLICATIONS
·Switching power supplies
·Motor controls,Inverters and Choppers
·Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
100
±20
V
V
Drain Current-continuous@ TC=25℃ 8 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.12
30
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0
VSD Diode Forward Voltage
IS=8A; VGS=0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
RGS=50Ω
ID=4A;
VDD=50V;
RL=50Ω
isc Product Specification
IRF120
MIN TYPE MAX UNIT
100 V
2.0 4.0 V
0.3 Ω
±100 nA
250 uA
2.5 V
450 600
50 100 pF
200 400
35 70
20 40
ns
35 70
50 100
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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