파트넘버.co.kr 75N10 데이터시트 PDF


75N10 반도체 회로 부품 판매점

N-Channel Power MOSFET / Transistor



nELL 로고
nELL
75N10 데이터시트, 핀배열, 회로
SEMICONDUCTOR
75N10 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(75A, 100Volts)
DESCRIPTION
The Nell 75N10 is a three-terminal silicon device
with current conduction capability of 75A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 100V, and max. threshold voltage of 5 volts.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications.
These transistors can be operated directly from
integrated circuits.
DD
G
D
S
TO-3PB
(75N10A)
GDS
TO-220AB
(75N10B)
FEATURES
RDS(ON) = 0.025Ω @ VGS = 10V
Ultra low gate charge(74nC typical)
Low reverse transfer capacitance
(CRSS = 275pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (Ω)
QG(nC) typical
75
75
100
0.025 @ VGS = 10V
74
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
VDSS
VDGR
VGS
ID
IDM
IAR
EAR
EAS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 3)
TJ=25°C to 150°C
RGS=1MΩ
TC=25°C
TC=100°C
lAS=50A, L=0.8mH
100
100
±20
75
50
200
50
30
1000
dv/dt
PD
TJ
TSTG
TL
Peak diode recovery dv/dt(Note 4)
Total power dissipation
Linear derating factor above TC=25°C
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
TC=25°C
1.6mm from case
10
300
1.90
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Caluclated continuous current based on maximum allowable junction temperature. Package limitation current is 75A
2.Repetitive rating: pulse width limited by junction temperature.
3.L = 0.8mH, IAS ≤ 50A , RG = 25Ω,TJ ≤ 150°C.
4.ISD ≤ 50A, di/dt ≤ 100A/µs, VDD V(BR)DSS, TJ = 150°C.
UNIT
V
A
mJ
V /ns
W
°C/W
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 8


75N10 데이터시트, 핀배열, 회로
SEMICONDUCTOR
75N10 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-3PB
Min.
Typ.
Max. UNIT
0.42
62 ºC/W
40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
VGS = 0V, ID = 250µA
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, referenced to 25°C
IDSS
Drain to source leakage current
VDS=100V, VGS=0V
VDS=80V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
VGS(TH)
Static drain to source on-state resistance
Gate threshold voltage
VGS = 10V, lD = 37.5A (Note 1)
VGS=VDS, ID=250μA
gfS Forward transconductance
VDS=10V, ID=37.5A
DYNAMIC CHARACTERISTICS
CISS
COSS
Input capacitance
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 50V, ID = 75A,RG = 10Ω,
VGS = 10V(Note 1)
tf Fall time
QG Total gate charge
QGS
Gate to source charge
VDS = 50V, VGS = 10V, ID = 37.5A
QGD
Gate to drain charge (Miller charge)
LD Internal drain inductance
LS Internal source inductance
Between lead, 6mm from
package and center of die
Min.
100
2.5
20
Typ.
0.105
21
28
2250
890
275
27
53
66
45
74
18
40
4.5
7.5
Max.
25
250
100
-100
25
5.0
UNIT
V
V/ºC
μA
nA
V
S
pF
ns
nC
μH
www.nellsemi.com
Page 2 of 8




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75N10 mosfet

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