파트넘버.co.kr MTB17A03Q8 데이터시트 PDF


MTB17A03Q8 반도체 회로 부품 판매점

Dual N-Channel Logic Level Enhancement Mode MOSFET



Cystech Electonics 로고
Cystech Electonics
MTB17A03Q8 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date :
Page No. : 1/8
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTB17A03Q8
Description
The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=15m(max.)@VGS=10V, ID=10A
Simple drive requirement
Low on-resistance
Fast switching speed
Dual N-ch MOSFET package
Pb-free & Halogen-free package
Equivalent Circuit
MTB17A03Q8
Outline
SOP-8
Pin 1
GGate
SSource
DDrain
MTB17A03Q8
CYStek Product Specification


MTB17A03Q8 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, TC=25 °C
Continuous Drain Current, TC=100 °C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
(Note 2)
Power Dissipation
TA=25°C (Note 3)
TA=100°C
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
30
±20
10
7
40
12
5
2.5
2.4
1.2
Operating Junction and Storage Temperature Range
Tj ; Tstg -55~+175
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V N-CH
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62.5 *3 °C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
*RDS(ON) *1
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
30
1
-
-
-
-
10
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=250μA
1.5 3 V VDS = VGS, ID=250μA
18 - S VDS =5V, ID=10A
-
±100
nA VGS=±20
-
-
1
25
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
- - A VDS =10V, VGS =10V
13
20
15
25
mΩ
VGS =10V, ID=10A
VGS =4.5V, ID=6A
11 -
6
1.2
- nC ID=10A, VDS=15V, VGS=10V
3.3 -
11 -
16
36
-
-
ns
VDS=15V, ID=1A,VGS=10V,
RG=6Ω, RD=15Ω
20 -
MTB17A03Q8
CYStek Product Specification




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Cystech Electonics

( cystech )

MTB17A03Q8 mosfet

데이터시트 다운로드
:

[ MTB17A03Q8.PDF ]

[ MTB17A03Q8 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


MTB17A03Q8

Dual N-Channel Logic Level Enhancement Mode MOSFET - Cystech Electonics