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PDF MTB17A03V8 Data sheet ( Hoja de datos )
| Número de pieza | MTB17A03V8 | |
| Descripción | Dual N-Channel Logic Level Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB17A03V8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C396V8
Issued Date : 2013.08.09
Revised Date : 2013.08.14
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode MOSFET
MTB17A03V8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=6A
VGS=4.5V, ID=4A
30V
7A
16mΩ
25mΩ
Description
The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package,
providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB17A03V8
Outline
DFN3×3
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
MTB17A03V8-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB17A03V8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C396V8
Issued Date : 2013.08.09
Revised Date : 2013.08.14
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
C oss
100
Crss
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=5V
10
1
0.1
0.01
0.001
VDS=15V
VDS=10V
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limite
10
100μs
1ms
1 10ms
100ms
0.1 TA=25°C, Tj=150°C
VGS=10V, RθJA=84°C/W
Single Pulse
1s
DC
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=10V
6 VDS=5V
4
2 ID=7A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
9
8
7
6
5
4
3
2
1 TA=25°C, VGS=10V, RθJA=84°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB17A03V8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB17A03V8.PDF ] | |
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