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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
7N45
·DESCRIPTION
·Drain Current ID= 7A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
450
±30
7
V
V
A
ID(puls)
Pulse Drain Current
40 A
Ptot Total Dissipation@TC=25℃
125 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.83 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
7N45
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=0.25µA
VDS= VGS; ID=0.25µA
IS=7A ;VGS= 0
VGS= 10V; ID=4A
VGS= ±20V;VDS= 0
VDS= 450V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=4A;
VDD=220V;
RL=4.7Ω
MIN TYPE MAX UNIT
450 V
2.0 4.0 V
1.8 V
1.1 Ω
±100 nA
20 µA
1600
100 pF
350
15
35
ns
30
90
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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