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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N50
DESCRIPTION
·Drain Current ID= 6A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Fast Switching Speed
APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
500
±30
6
V
V
A
ID(puls)
Pulse Drain Current
15 A
Ptot Total Dissipation@TC=25℃
100 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.67 ℃/W
62.5 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
6N50
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
VDS= VGS; ID=1mA
IS=3A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID=3A
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=3A;
VDD=250V;
RL=50Ω
MIN TYPE MAX UNIT
500 V
2.0 4.0 V
1.4 V
1.25 Ω
±100 nA
10 µA
1500
200 pF
250
40
15
ns
60
190
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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