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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
9N90L
·DESCRIPTION
·Drain Current ID= 9A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
900
±20
9
V
V
A
ID(puls)
Pulse Drain Current
36 A
Ptot Total Dissipation@TC=25℃
280 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.7 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
9N90L
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
VGS= 0; ID=1mA
VDS= VGS; ID=250µA
IS=9A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID=4.5A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
MIN TYPE MAX UNIT
800 V
3.0 5.0 V
1.4 V
1.4 Ω
±100 nA
10 µA
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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