6N40 반도체 회로 부품 판매점
N-Channel MOSFET Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N40
·DESCRIPTION
·Drain Current ID= 6A@ TC=25℃
·Drain Source Voltage-
: VDSS= 400V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
400
±30
6
V
V
A
ID(puls)
Pulse Drain Current
24 A
Ptot Total Dissipation@TC=25℃
38 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
6N40
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IF=6A ;VGS= 0
VGS= 10V; ID= 3A
VGS= ±30V;VDS= 0
VDS= 400V; VGS= 0
MIN TYPE MAX UNIT
400 V
2.0 4.0 V
1.4 V
1.0 Ω
±100 nA
250 µA
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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( isc )
6N40 mosfet
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[ 6N40.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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