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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
5N40
·DESCRIPTION
·Drain Current ID= 5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 400V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
400
±30
5
V
V
A
ID(puls)
Pulse Drain Current
20 A
Ptot Total Dissipation@TC=25℃
75 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.67 ℃/W
62.5 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
5N40
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IS=5A ;VGS= 0
VGS= 10V; ID=2.5A
VGS= ±30V;VDS= 0
VDS= 400V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
MIN TYPE MAX UNIT
400 V
2.0 4.0 V
1.6 V
1.0 Ω
±100 nA
10 µA
900
80 pF
300
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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