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PDF ACE2391M Data sheet ( Hoja de datos )
| Número de pieza | ACE2391M | |
| Descripción | N-Channel 150-V MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE2391M
N-Channel 150-V MOSFET
Description
ACE2391M uses advanced trench technology to provide excellent RDS(ON). This device particularly
suits for low voltage application such as power management of desktop computer or notebook computer
power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current b
TA=25°C
TA=70°C
Continuous Source Current (Diode Conduction) a
Power Dissipationa
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
150
±20
1.1
0.9
5
1.6
1.3
0.8
-55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
t<=10sec
Steady State
Symbol Maximum Unit
RθJA
100
°C/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Packing Information
STO-23-3
ACE2391M
N-Channel 150-V MOSFET
SYMBOLS
A
A1
A2
b
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
MILLIMETERS
MIN NOM MAX
0.935
0.95
1.10
0.01 0.10
0.85 0.90 0.925
0.30 0.40 0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.40 1.60 1.80
0.95 BSC
1.90 BSC
0.30 0.40 0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
VER 1.1 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ACE2391M.PDF ] | |
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