2SK1217 반도체 회로 부품 판매점
N-Channel MOSFET Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1217
DESCRIPTION
·Drain Current –ID=8A@ TC=25℃
·Drain Source Voltage-
: VDSS=900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±30
V
V
Drain Current-continuous@ TC=25℃ 8 A
Total Dissipation@TC=25℃
100 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.25
30
℃/W
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1217
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
VSD Forward On-Voltage
IS=8A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=8A;
RL=25Ω
toff Turn-off time
MIN TYP. MAX UNIT
900 V
2.5 3.5 5.0 V
1.5 2.0
Ω
±100 nA
500 uA
1.0 1.5
V
230 350
ns
280 425
ns
160 240
ns
620 690
ns
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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2SK1217 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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