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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1064
DESCRIPTION
·Drain Current –ID=15A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Fast Switching Speed
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies
·DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 15 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature
200
℃
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.56
Thermal Resistance,Junction to Ambient 62.5
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1064
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=8A
IGSS Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0
VSD) Forward On-Voltage
ton Turn-on time
toff Turn-off time
IF= 15A; VGS= 0
VGS=10V;ID=8A;
RL=3.75Ω
MIN TYP MAX UNIT
500 V
2.0 4.0 V
0.3 0.4
Ω
±10 uA
250 uA
1.2 V
145 ns
420 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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