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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1052
DESCRIPTION
·Drain Current –ID=0.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
450 V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25℃ 0.5 A
Total Dissipation@TC=25℃
30 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.75
Thermal Resistance,Junction to Ambient 30
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1052
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=0.3A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 450V; VGS= 0
VSD Forward On-Voltage
IS=0.5A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=0.3A;
RL=50Ω
toff Turn-off time
MIN TYP. MAX UNIT
450 V
2.0 3.0 V
5.5 7.0
Ω
±100 nA
1 mA
1.8 V
8 ns
18 ns
70 ns
100 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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