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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current –ID=10A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
APPLICATIONS
·high voltage, high speed power switching
isc Product Specification
2SK1011
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
450 V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25℃ 10 A
Total Dissipation@TC=25℃
100 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.25
Thermal Resistance,Junction to Ambient 35
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1011
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 450V; VGS= 0
VSD Forward On-Voltage
IS=10A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=10A;
RL=25Ω
toff Turn-off time
MIN TYP. MAX UNIT
450 V
2.5 3.5 5.0 V
0.5 0.65
Ω
±100 nA
500 uA
1.1 1.5
V
80 120 ns
110 165
ns
80 120 ns
240 360 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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