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FDD13AN06A0 반도체 회로 부품 판매점

N-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD13AN06A0 데이터시트, 핀배열, 회로
November 2013
FDD13AN06A0
N-Channel PowerTrench® MOSFET
60 V, 50 A, 13 mΩ
Features
RDS(on) = 11.5 m( Typ.) @ VGS = 10 V, ID = 50 A
QG(tot) = 22 nC ( Typ.) @ VGS = 10 V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Formerly developmental type 82555
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 80oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
EAS Single Pulse Avalanche Energy ( Note 1)
PD
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
FDD13AN06A0
60
±20
50
9.9
Figure 4
56
115
0.77
-55 to 175
Thermal Characteristics
RθJC
Rθ
RθJA
Thermal Resistance Junction to Case, Max. D-PAK
Thermal Resistance Junction to Ambient, Max. D-PAK
Thermal Resistance Junction to Ambient, Max. D-PAK, 1in2 copper pad area
1.3
100
52
Unit
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. C2
1
www.fairchildsemi.com


FDD13AN06A0 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Device Marking
FDD13AN06A0
Device
FDD13AN06A0
Package
D-PAK
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 50A, VGS = 10V
ID = 25A, VGS = 6V
ID
TJ
=
=
5107A5,oCVGS
=
10V,
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V
ID = 50A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 30V, ID = 50A
VGS = 10V, RGS = 12
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 45µH, IAS = 50A.
ISD = 50A
ISD = 25A
ISD = 50A, dISD/dt = 100A/µs
ISD = 50A, dISD/dt = 100A/µs
Min Typ Max Unit
60 - - V
- -1
- - 250 µA
- - ±100 nA
2 - 4V
- 0.0115 0.0135
- 0.022 0.034
- 0.026 0.030
- 1350 -
pF
- 260 -
pF
- 90 - pF
22 29 nC
- 2.6 3.4 nC
- 8.2 - nC
- 5.6 - nC
- 6.4 - nC
- - 130 ns
- 9 - ns
- 77 - ns
- 26 - ns
- 25 - ns
- - 77 ns
-
-
1.25
V
- - 1.0 V
- - 24 ns
- - 15 nC
©2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. C2
2
www.fairchildsemi.com




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FDD13AN06A0 mosfet

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N-Channel PowerTrench MOSFET - Fairchild Semiconductor