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Inchange Semiconductor |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N12
·FEATURES
·Drain Current ID= 2A@ TC=25℃
·Drain Source Voltage-
: VDSS= 120V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.75Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
120
±30
V
V
ID Drain Current-Continuous
2A
IDM Drain Current-Single Plused
5A
PD Total Dissipation @TC=25℃
25 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N12
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=1mA
IS= 2A ;VGS= 0
VGS= 10V; ID= 1A
VGS= ±20V;VDS= 0
VDS=120V; VGS= 0
MIN TYPE MAX UNIT
120 V
2.0 4.0 V
1.4 V
1.75 Ω
±100 nA
250 µA
·
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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