|
International Rectifier |
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRF100B202
HEXFET® Power MOSFET
D VDSS 100V
RDS(on) typ.
7.2m
G
max
8.6m
IS
D (Silicon Limited)
97A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
G
Gate
Base part number
IRF100B202
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
GDS
TO-220AB
IRF100B202
D
Drain
S
Source
Orderable Part Number
IRF100B202
25
ID = 58A
20
TJ = 125°C
15
10 TJ = 25°C
5
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
August 18, 2014
IRF100B202
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max.
97
68
380
221
1.5
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited)
EAS (tested)
IAR
EAR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
189
292
217
See Fig 15, 16, 23a, 23b
Units
A
W
W/°C
V
°C
mJ
A
mJ
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.68
–––
62
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
Typ.
–––
0.10
7.2
–––
–––
–––
–––
–––
2.4
Max.
–––
–––
8.6
4.0
20
250
100
-100
–––
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 58A
VDS = VGS, ID = 150µA
VDS =100 V, VGS = 0V
VDS = 80V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.113mH, RG = 50, IAS = 58A, VGS =10V.
ISD 58A, di/dt 1316A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 24A, VGS =10V.
This value determined from sample failure population, starting TJ =25°C, L= 0.113mH, RG = 50, IAS =58A, VGS =10V.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 18, 2014
|