파트넘버.co.kr TMP11N50G 데이터시트 PDF


TMP11N50G 반도체 회로 부품 판매점

N-channel MOSFET



TRinno 로고
TRinno
TMP11N50G 데이터시트, 핀배열, 회로
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Fast reverse recovery
TMP11N50/TMPF11N50
TMP11N50G/TMPF11N50G
VDSS = 550 V @Tjmax
ID = 11A
RDS(ON) = 0.67 W(max) @ VGS= 10 V
D
G
Device
TMP11N50 / TMPF11N50
TMP11N50G / TMPF11N50G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP11N50 / TMPF11N50
TMP11N50G / TMPF11N50G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
July 2010 : Rev1
Symbol
RqJC
RqJA
www.trinnotech.com
TMP11N50(G) TMPF11N50(G)
500
±30
11 11 *
6 6*
44 44*
544
11
15.8
158 51.4
1.26 0.41
4.5
-55~150
300
TMP11N50(G)
0.79
62.5
TMPF11N50(G)
2.43
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Unit
/W
/W
1/5


TMP11N50G 데이터시트, 핀배열, 회로
TMP11N50/TMPF11N50
TMP11N50G/TMPF11N50G
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 500 --
--
V
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
IDSS
VDS = 400 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
VDS = 30 V, ID = 5.5 A
2 -- 4 V
-- 0.54 0.67 W
-- 10 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD = 250 V, ID = 11 A,
RG = 25
VDS = 400V, ID = 11 A,
VGS = 10 V
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 11 A
VGS = 0 V, IS = 11 A
dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=8.1mH, I AS = 11A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD ≤ 11A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 1423 --
-- 140 --
-- 8.3 --
-- 50 --
-- 46 --
-- 124 --
-- 53 --
-- 28 --
-- 6.4 --
-- 5.9 --
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-- -- 11 A
-- -- 44 A
-- -- 1.5 V
-- 310 --
ns
-- 2.6 -- mC
July 2010 : Rev1
www.trinnotech.com
2/5




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: TRinno

( trinno )

TMP11N50G mosfet

데이터시트 다운로드
:

[ TMP11N50G.PDF ]

[ TMP11N50G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


TMP11N50

N-channel MOSFET - TRinno



TMP11N50G

N-channel MOSFET - TRinno



TMP11N50SG

N-channel MOSFET - TRinno