파트넘버.co.kr TMP20N50 데이터시트 PDF


TMP20N50 반도체 회로 부품 판매점

N-channel MOSFET



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TMP20N50 데이터시트, 핀배열, 회로
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP20N50/TMPF20N50
TMP20N50G/TMPF20N50G
VDSS = 550 V @Tjmax
ID = 18A
RDS(on) = 0.3 W(max) @ VGS= 10 V
D
G
S
Device
TMP20N50 / TMPF20N50
TMP20N50G / TMPF20N50G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP20N50 / TMPF20N50
TMP20N50G / TMPF20N50G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP20N50(G) TMPF20N50(G)
500
±30
18 18*
13.1 13.1*
72 72*
954
18
29
290 48
2.32 0.38
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP20N50(G)
0.43
62.5
December 2010 : Rev2
www.trinnotech.com
TMPF20N50(G)
2.6
62.5
Unit
/W
/W
1/5


TMP20N50 데이터시트, 핀배열, 회로
TMP20N50/TMPF20N50
TMP20N50G/TMPF20N50G
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 500 --
--
V
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
IDSS
VDS = 400 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 9 A
VDS = 30 V, ID = 9 A
2 -- 4
-- 0.25 0.3
-- 11 --
V
W
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD = 250 V, ID = 18 A,
RG = 25
VDS = 400V, ID = 18 A,
VGS = 10 V
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
IS
ISM
---
---
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 18 A
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
trr VGS = 0 V, IS = 18 A
Qrr dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=5.3mH, I AS = 18A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD ≤ 18A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 3094 --
-- 296 --
-- 9.2 --
-- 78 --
-- 72 --
-- 184 --
-- 68 --
-- 54 --
-- 15 --
-- 12.5 --
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-- -- 18 A
-- -- 72 A
-- -- 1.5 V
-- 426 --
ns
-- 6 -- µC
December 2010 : Rev2
www.trinnotech.com
2/5




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