파트넘버.co.kr TMP10N60G 데이터시트 PDF


TMP10N60G 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



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TRinno
TMP10N60G 데이터시트, 핀배열, 회로
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G
VDSS = 660 V @Tjmax
ID = 10A
RDS(on) = 0.75 W(max) @ VGS= 10 V
D
G
S
Device
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP10N60(G) TMPF10N60(G)
600
±30
10 10*
6.5 6.5*
40 40*
758
10
19.8
198 52
1.58 0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP10N60(G)
0.63
62.5
May 2010 : Rev1
www.trinnotech.com
TMPF10N60(G)
2.4
62.5
Unit
/W
/W
1/5


TMP10N60G 데이터시트, 핀배열, 회로
TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5 A
VDS = 30 V, ID = 5 A
2 -- 4 V
-- 0.59 0.75 W
-- 9 -- S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
ISM
VSD
trr
Qrr
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 300 V, ID = 10 A,
RG = 25
VDS = 480V, ID = 10 A,
VGS = 10 V
---
---
VGS = 0 V, IS = 10 A
VGS = 0 V, IS = 10 A
dIF / dt = 100 A/µs
-- 1891 --
-- 160 --
-- 5.8 --
-- 55 --
-- 39 --
-- 156 --
-- 53 --
-- 36 --
-- 8.3 --
-- 8.3 --
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-- -- 10 A
-- -- 40 A
-- -- 1.5 V
-- 344 --
ns
-- 3.6 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=13.9mH, I AS = 10A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD ≤ 10A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
May 2010 : Rev1
www.trinnotech.com
2/5




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TMP10N60G mosfet

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