파트넘버.co.kr CN2305 데이터시트 PDF


CN2305 반도체 회로 부품 판매점

P-Channel Enhancement Mode Power MOSFET



CONSONANCE 로고
CONSONANCE
CN2305 데이터시트, 핀배열, 회로
CONSONANCE
P-Channel Enhancement Mode Power MOSFET
CN2305
General Description:
The CN2305 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Applications:
Battery protection
Load switch
Power management
Pin Assignment
Schematic diagram
Features:
VDS = -20V,ID = -4.1A
RDS(ON) < 75m@ VGS=-2.5V
RDS(ON) < 52m@ VGS=-4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Available in 3 pin SOT23 Package
Pb-free, rohs compliant and halogen free
Top view
Ordering Information
Part Number
CN2305
Device Marking
2305
www.consonance-elec.com
Package
SOT-23
1
Operating Ambient Temperature
40to 85
REV 1.0


CN2305 데이터시트, 핀배열, 회로
CONSONANCE
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
TC =25
TC =70
TA =25
TA =70
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-20
±12
-4.1
-3.2
-3
-2.3
-15
1.2
-55 to 150
Thermal Characteristic
Unit
V
V
A
A
W
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA 100 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Condition
Min
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
CIss
Coss
Crss
VGS=0V ID=-250μA
VDS=-20V,VGS=0V
VGS=±10V,VDS=0V
-20
-
-
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-4.1A
VGS=-2.5V, ID=-3A
VDS=-5V,ID=-4.1A
-0.45
-
-
-
VDS=-4V,VGS=0V,
F=1.0MHz
-
-
-
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-4V,ID=-3.3A ,
RL=1.2,VGEN=-4.5V,
Rg=1
VDS=-4V,ID=-4.1A,
VGS=-4.5V
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=-1.6A
-
-
www.consonance-elec.com
2
Typ Max Unit
- -V
- -1 uA
- ±100 nA
-0.7 -1
V
45 52 m
60 75 m
8.5 - A/V
740 - PF
290 - PF
190 - PF
12 - nS
35 - nS
30 - nS
10 - nS
7.8 - nC
1.2 - nC
1.6 - nC
- -1.2
- 1.6
REV 1.0
V
A




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CN2305 mosfet

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CN2305

P-Channel Enhancement Mode Power MOSFET - CONSONANCE