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PDF PJD50N10L Data sheet ( Hoja de datos )
| Número de pieza | PJD50N10L | |
| Descripción | 100V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PPJU50N10L / PJD50N10L
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
50 A
Features
RDS(ON), VGS@10V,ID@30A<22mΩ
High switching speed
Improved dv/dt capability
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB, TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 1)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
100
+20
50
32
100
96
38
8
6.5
2.5
1.6
80
-55~150
1.3
50 (Note 1)
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
April 9,2015-REV.00
Page 1
1 page  
PPJU50N10L / PJD50N10L
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
April 9,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PJD50N10L.PDF ] | |
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