파트넘버.co.kr PJU50N10L 데이터시트 PDF


PJU50N10L 반도체 회로 부품 판매점

100V N-Channel Enhancement Mode MOSFET



Pan Jit International 로고
Pan Jit International
PJU50N10L 데이터시트, 핀배열, 회로
PPJU50N10L / PJD50N10L
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
50 A
Features
RDS(ON), VGS@10V,ID@30A<22mΩ
High switching speed
Improved dv/dt capability
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB, TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 1)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
100
+20
50
32
100
96
38
8
6.5
2.5
1.6
80
-55~150
1.3
50 (Note 1)
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
April 9,2015-REV.00
Page 1


PJU50N10L 데이터시트, 핀배열, 회로
PPJU50N10L / PJD50N10L
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
TEST CONDITION
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=30A
VDS=80V,VGS=0V
VGS=+20V,VDS=0V
VDS=50V, ID=30A,
VGS=10V (Note 2,3)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=50V, ID=30A,
VGS=10V, RG=3Ω
(Note 2,3)
---
IS=1A,VGS=0V
VGS=0V, IS=20A
dIF/ dt=100A/us (Note 2)
NOTES :
1. The test by surface mounted on 1 inch FR4 board with 2oz copper.
2. L=0.1mH, IAS=40A, VDD=25V, VGS=10V, RG=25ohm, Starting TJ=25oC
3. The Power dissipation is limit by 150junction temperature.
4. Pulse width<300us, Duty cycle<2%
5. Guaranteed by design, not subject to production testing
MIN. TYP. MAX. UNITS
100 - - V
2.5 3.57 4.5
-
18.3
22
V
mΩ
- 0.01 1.0 uA
- +10 +100 nA
- 29 -
- 9.5 -
- 10 -
- 1643 -
- 257 -
- 63 -
- 19 -
- 56 -
- 25 -
- 13 -
nC
pF
ns
- - 50 A
- 0.67 1.0 V
- 31 - ns
- 38 - uC
April 9,2015-REV.00
Page 2




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Pan Jit International

( panjit )

PJU50N10L mosfet

데이터시트 다운로드
:

[ PJU50N10L.PDF ]

[ PJU50N10L 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


PJU50N10L

100V N-Channel Enhancement Mode MOSFET - Pan Jit International